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Results 1 to 25 of 68

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Enhanced band edge luminescence from stress and defect free GaN nanowall network morphologyTHAKUR, Varun; KESARIA, Manoj; SHIVAPRASAD, S. M et al.Solid state communications. 2013, Vol 171, pp 8-13, issn 0038-1098, 6 p.Article

Sb adsorption and desorption pathways on (2 x 1) and c(4 x 4) reconstructed Si(001) surfacesVINOD KUMAR PALIWAL; KUMAR, Mahesh; SHIVAPRASAD, S. M et al.Surface science. 2005, Vol 585, Num 1-2, pp 53-58, issn 0039-6028, 6 p.Article

On the coverage and structure of the Ag/Si(√3 x √3)-R30 surface phaseSHIVAPRASAD, S. M; APARNA, Y; SANDEEP SINGH et al.Solid state communications. 1998, Vol 107, Num 6, pp 257-261, issn 0038-1098Article

A new material for the fabrication of thin film resistorsANGADI, M. A; SHIVAPRASAD, S. M.Journal of materials science letters. 1984, Vol 3, Num 8, pp 739-742, issn 0261-8028Article

A phase diagram of the Sb/Si(001) interfacial systemVINOD KUMAR PALIWAL; SHIVAPRASAD, S. M.Surface science. 2004, Vol 561, Num 2-3, pp L207-L212, issn 0039-6028Article

The catalytic role of ultrathin Mn film in the oxidation of Si(111) 7 X 7 surfaceSINGH, S; SHIVAPRASAD, S. M; ANANDAN, C et al.Applied surface science. 1998, Vol 136, Num 3, pp 189-193, issn 0169-4332Article

Some transport properties of palladium films = Quelques propriétés de transport de couches minces de palladiumANGADI, M. A; SHIVAPRASAD, S. M.Journal of materials science. 1984, Vol 19, Num 7, pp 2396-2400, issn 0022-2461Article

The frequency response of the effective resistance of thin palladium and manganese films = Réponse en fréquence de la résistance effective de couches minces de palladium et de manganèseANGARDI, M. A; SHIVAPRASAD, S. M.Journal of materials science letters. 1983, Vol 2, Num 5, pp 207-209, issn 0261-8028Article

Surface nitridation induced AlN nano-columnar growth on c-sapphireSHETTY, Satish; GHATAK, Jay; SHIVAPRASAD, S. M et al.Solid state communications. 2014, Vol 180, pp 7-10, issn 0038-1098, 4 p.Article

Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative studyKUYYALIL, Jithesh; GOVIND; KUMAR, Mahesh et al.Surface science. 2010, Vol 604, Num 21-22, pp 1972-1977, issn 0039-6028, 6 p.Article

Temperature-dependent resistivity of discontinuous manganese films = Résistivité fonction de la température de couches minces discontinues de manganèseANGADI, M. A; SHIVAPRASAD, S. M.Journal of materials science letters. 1986, Vol 5, Num 4, pp 405-407, issn 0261-8028Article

Ga induced 2D superstructural phase diagram on trenched Si(5 5 12) surfaceKUMAR, Praveen; KUMAR, Mahesh; SHIVAPRASAD, S. M et al.Surface science. 2012, Vol 606, Num 13-14, pp 1045-1049, issn 0039-6028, 5 p.Article

AES investigation of annealing effects on the oxygen adsorbed Mn/Si(111) interfaceSINGH, S; SHIVAPRASAD, S. M; ANANDAN, C et al.Applied surface science. 1999, Vol 152, Num 3-4, pp 213-218, issn 0169-4332Article

Residual thermal desorption studies of Ga adatoms on trenched Si(5 5 12) surfaceKUMAR, Praveen; KUMAR, Mahesh; SHIVAPRASAD, S. M et al.Applied surface science. 2013, Vol 282, pp 348-350, issn 0169-4332, 3 p.Article

Evidence for Dislocation Induced Spontaneous Formation of GaN Nanowalls and Nanocolumns on Bare C-Plane SapphireKESARIA, Manoj; SHETTY, Satish; SHIVAPRASAD, S. M et al.Crystal growth & design. 2011, Vol 11, Num 11, pp 4900-4903, issn 1528-7483, 4 p.Article

Angle-dependent XPS analysis of silicon nitride film deposited on screen-printed crystalline silicon solar cellSINGH, Priyanka; SHIVAPRASAD, S. M; LAL, M et al.Solar energy materials and solar cells. 2009, Vol 93, Num 1, pp 19-24, issn 0927-0248, 6 p.Conference Paper

Effect of ratios of Cd:Se in CdSe nanoparticles on optical edge shifts and photoluminescence propertiesSHARMA, Himani; SHARMA, Shailesh N; SINGH, Gurmeet et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 31, Num 2, pp 180-186, issn 1386-9477, 7 p.Article

Observation of electron transfer in the silicidation and oxidation of molybdenum by AES and EELSBERA, S; SHIVAPRASAD, S. M; SHARMA, J. K. N et al.Applied surface science. 1994, Vol 74, Num 1, pp 13-17, issn 0169-4332Article

Ga-induced restructuring of Si(5 5 12 ) — 2 x 1 reconstructed surface at room temperatureKUMAR, Praveen; KUMAR, Mahesh; MEHTA, B. R et al.Surface science. 2011, Vol 605, Num 15-16, pp 1426-1430, issn 0039-6028, 5 p.Article

A novel (8 x 4) superstructure as precursor to the c(4×4) phase during Sb/Si(001) desorptionVINOD KUMAR PALIWAL; VEDESHWAR, A. G; SHIVAPRASAD, S. M et al.Surface science. 2003, Vol 540, Num 2-3, pp L617-L622, issn 0039-6028Article

Observation of novel superstructures at low Sb coverages on Si(111)-7 x 7 surfaceVINOD KUMAR PALIWAL; VEDESHWAR, A. G; SHIVAPRASAD, S. M et al.Surface science. 2002, Vol 513, Num 2, pp L397-L401, issn 0039-6028Article

Electron-stimulated desorption of fluorine from barium fluoride films deposited on silicon substratesSHARMA, J. K. N; CHAKRABORTY, B. R; SHIVAPRASAD, S. M et al.Journal of applied physics. 1990, Vol 68, Num 5, pp 2489-2492, issn 0021-8979, 4 p.Article

Adsorption properties of Pt films on W(110) = Propriétés d'adsorption des couches de Pt sur W(110)DEMMIN, R. A; SHIVAPRASAD, S. M; MADEY, T. E et al.Langmuir. 1988, Vol 4, Num 5, pp 1104-1108, issn 0743-7463Conference Paper

Ion induced compositional changes and nanodroplet formation on GaN surfaceVENUGOPAL, Vinay; UPADHYAYA, Kishor; KUMAR, Kishore et al.Applied surface science. 2014, Vol 315, pp 440-444, issn 0169-4332, 5 p.Conference Paper

Phosphorous passivation of In0.53Ga0.47As using MOVPE and characterization of Au-Ga2O3 (Gd2O3)-In0.53Ga0.47As MIS capacitorPAL, S; SHIVAPRASAD, S. M; APARNA, Y et al.Applied surface science. 2005, Vol 245, Num 1-4, pp 196-201, issn 0169-4332, 6 p.Article

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